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This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.
This result shows that tc of InAs/GaAs QDs grown on high miller surfaces, i.e., GaAs (311) B, can be adjusted through modifying the type and amount of IF bonds and further to modify the equilibrium structures.
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So this effect offers one parameter for the design and fabrication of self-assembled QDs, and should be regarded as an advantage for the InAs QDs grown on high miller index surfaces compared to the conventional GaAs (100) surfaces.
For common anion systems, such as InAs/(In)GaAs, this effect can only be observed at high miller index surfaces, which can be used to adjust the morphology in the QDs grown on high miller index surfaces.
For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology andtccan be influenced by the interfacial bonds configuration.
So if the epitaxy is performed on a high miller index surface, the effect of IF bonds on tc can be observed, even for the common anion systems.
show faceted crystals from high rock-surfaces.
High surface area.
In Figure 4a the calculated bistability regions are compared for Pd(111) and Pt(111), and in Figure 4b the three low Miller-indexed surfaces of Pt can be compared to each other.
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