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A high In content is expected to lower the liquid vapor surface tension and thereby increase the work of adhesion.
The Glasgow finite element heterostructure Monte Carlo device simulator has been carefully calibrated against HEMTs with low and high In content in the channel fabricated at Glasgow and transport data measured on implant free layer structures with high-κ gate dielectric grown at Glasgow and Freescale.
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Furthermore, the step-wise increase of In-content provides the facility to use of ternary InGaN as a substrate materials for the upper layers with high In-content.
Besides, QD design enables high In-content InGaN epitaxy, which enlarges the coverage of emission spectrum and enriches the design of QD-based active region.
For high In-content InGaN/GaN MQWs, an extremely high V/III ratio is needed to conquer the nitrogen deficiency on the growing surface[17].
Other sources of dislocation such as V-defects and surface inclusions are also reported for single-phase high In-content InGaN on GaN [19].
Thus, according to the in situ 405-nm light monitoring signals, the parameters for growth of high-quality, high In-content InGaN/GaN MQW green LEDs can be optimized easily.
Moreover, due to the low miscibility of InN in GaN, high volatility of InN and the low thermal decompositional efficiency of ammonia (NH3) at low temperature, indium separation, and roughness interface usually exist in high In-content InGaN/GaN MQWs[9, 10].
The design also avoids many of the problems found to date in homojunction cells as no p-type high-In content region is required.
Furthermore, the quantum-confined Stark effect (QCSE) of high-In-content InGaN/GaN MQWs leads to energy band tilting, which decreases the overlap integral of electrons and holes by spatial separation [9 12].
In previous reports, growth behaviors of high-In-content InGaN quantum dots using a growth interruption method are intensively investigated [16 20], which paves the way to high-efficiency QD LEDs.
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