Sentence examples for high frequency powers from inspiring English sources

Ultra low (0.0-0.003 Hz) and very low frequency powers (0.003-0.04) will be examined for 24-hour data and low (0.04-0.15 Hz) and high frequency powers (0.15-0.4 Hz) and the low-to-high frequency power ratio will be examined for both 24-hour and short-term data.

Also, a new method for determining the key parameters of high frequency power standards is proposed.

Y. Han, A. Li, G. Cheung, C.R. Sullivan, and D.J. Perreault, "Evaluation of Magnetic Materials for Very High Frequency Power Applications," IEEE Transactions on Power Electronics, Vol. 27, No. 1, pp. 425-435, Jan . 2012

Y. Han, A. Li, G. Cheung, C.R. Sullivan, and D.J. Perreault, "Evaluation of Magnetic Materials for Very High Frequency Power Applications," 2008 IEEE Power Electronics Specialists Conference, June 2008, pp. 4270 – 4276.

Pilawa-Podgurski, A. Sagneri, and C.R. Sullivan, "Opportunities and Challenges in Very High Frequency Power Conversion," 2009 IEEE Applied Power Electronics conference, Feb. 2009, pp. 1-14.

Demonstrate new techniques for advanced high frequency power conversion, rising semiconductor technologies (e.g., GaN), new circuit designs, improved passive components, and advance materials and material characterization techniques.

He strives to achieve this vision through innovations in system architectures, circuit topologies and control appropriate for high frequency power electronics.

This study investigated the relationship between HRV and post childhood obesity intervention weight-management success, and involved recording the frequency-domain HRV measures ratio between low frequency and high frequency power (LF/HF) and high frequency power (HF), and the time-domain measure, percentage of successive beat-to-beat intervals that differ by more than 50ms (PNN50ms

This paper presents the design, fabrication, and characterization of on silicon integrated micro-transformers for high frequency power applications.

The insulated gate bipolar transistor (IGBT) is popularly used in high power, high frequency power-electronic applications such as motor control and inverters.

High frequency power connected to a substrate holder was used for self-biasing of up to − 110 V.