In this paper, high-capacitance devices based on EE silicon have been fabricated and characterized.
The trend to integrate passive components as near to the logic as possible provides an opportunity for high-capacitance devices.
In recent years, nanoporous materials based on silicon and alumina [11 13] have been reported to have very large surface to volume ratios and proposed for high-capacitance devices.
The electrochemical CV pretreatment provides an effective approach to activate the CNT surfaces for enhancing their electrochemical performance meeting diverse demands, and offers a new pathway to design and fabricate high-performance capacitance devices.
Fourth, major performance parameters, including high voltage, high capacitance, high power and high energy devices, as well as new device geometry of planar and all-solid-state devices, are described in details, highlighting the uniqueness and superiority of graphene for hybrid energy storage.
These results provided a promising electrode material for energy storage device with high capacitance, which is important for the increasing demands of power sources in cold environments, such as battery systems for electric vehicles in cold zone or for aeronautic applications.
Oxide materials with a high dielectric constant (k) have been used as gate dielectrics to fabricate top-gated graphene FETs because high-k dielectrics enable low voltage operation of devices by their high capacitance and also provide scaling capability [101-104].
The flexible EGF-based device showed a high capacitance capacity of 30.5 mF cm−2, excellent rate performance and good cycle stability which make it holds promise for applications in flexible, portable and wearable electronic devices.
Additionally, on integration of the prepared Ni(OH 2 with hierarchically porous carbons as negative electrode material, the hybrid supercapacitor device delivers a high capacitance of 115 F g−1 and a high energy density of 40.9 W h kg−1 at a power density of 405 W kg−1.
Because of high capacitance, supercapacitors are widely used in electronic devices.
