Sentence examples for high bulk mobility from inspiring English sources

Among them, InAs NWs possess excellent electron transport properties such as high bulk mobility, small effective mass, and low ohmic contact resistivity, which can be used for making high-performance electronic devices such as high-mobility transistors [6 8].

Among the III-V semiconductors, InAs NWs possess excellent electron transport properties such as high bulk mobility, small effective mass, and low ohmic contact resistivity, which can be used for preparing high-performance electronic devices such as high mobility transistor [12, 13].

InAs nanowires have indeed small electron effective mass and correspondingly high bulk electron mobility [4] that is typically limited by surface scattering, unless suitable core-shell heterostructure is adopted to avoid the impact of surface states [5].

Nevertheless, based on Hall measurement, it is clear that the H-doped a-IGZO HECL layer has a much higher bulk carrier mobility (at 14.6 cm2/Vs) than that in as-deposited a-IGZO (below detection limit at approximately 0.01 cm2/Vs).

ZnO, as a wide-bandgap (ca. 3.37 eV) semiconductor, possesses an energy-band structure and physical properties similar to those of TiO2 but has higher bulk electronic mobility (205 to 300 cm2 · V−1 · s−1) than TiO2 (0.1 to 4.0 cm2 · V−1 · s−1) that would be favorable for electron transport [9 11].

For oxides such as CexZr1−xO2 mixed oxides, O mobility is so high that surface and bulk mobility can no longer be distinguished.

It is shown that the carrier mobility can reach ~6000 cm2/(Vs) for the thinner film, almost one order of magnitude larger than the bulk mobility.

This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric.

The mobility consists of three parts: 1) surface acoustic phonon scattering (μsurf_aps), 2) surface roughness scattering (μsurf_rs), and 3) bulk mobility with doping-dependent modification (μbulk_dop).

We used the high vs. control bulk design and the beneficial allele in the high bulk was set to 0.6.

Their high electron mobility (bulk ZnO 150 to 350 cm2 V-1 s-1), high exciton binding energy (60 meV) and long diffusion length [8] make them great material candidates for electronics [9], optoelectronics [10, 11] devices and solar cell and photocatalyst applications [12 14].