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The wet etch bay consists of two hoods for acids and caustic wet processing and of an RCA station (SC1, SC2, and HF dip).
The RCA station is a designated wet bench for SC1 (DI water:NH4OH H2O2 5:1:1), SC2 (DI water:HCL,H2O2 6:1:1), and HF dip.
In (a) the nanowires after an HF dip are depicted.
The tiny nanocrystals (slightly oxidized at ambient atmosphere) are removed by the first HF dip.
This additional HF dip resulted in dissolution of the upper part of the SiNWs.
Contrary to Figure 4, the ITO contact is not observed since it has been partially removed after the HF dip.
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Fig. 3 The topography images of the same area after a HF etching, b HF etching followed by 2-min NHH etching, and c further HF dipping added after the NHH etching.
Here, a 30-s HF dipping is added after each NHH etching.
To confirm the above hypothesis, a 30-s HF dipping is added after the 2-min NHH etching.
In this experiment, wafers were directly exposed to all four oxidizing acid mixtures with no prior HF dipping.
Therefore, to get the exact etching rate and hence the composition distribution, a 30-s HF dipping is added after each NHH etching.
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