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Figure 1a illustrates our setup of the holographic lithography with a 325 nm He-Cd laser.

All the films were excited by the 325-nm line of the He-Cd laser.

For the PL excitation we applied the 15 mW He-Cd laser.

Steady-state photoluminescence was measured under continuous wave excitation by a Kimmon He-Cd laser, excitation wavelength 442 nm.

The optical features were analyzed by photoluminescence (PL; SPEX 1403 He-Cd Laser 325 nm, Horiba Ltd., Tokyo, Japan).

The emission from the ZnO-NCs in the SiO2 matrix at various RTP annealing temperatures was investigated using PL with a 325-nm He-Cd continuous excitation laser.

To investigate the energy band of the Si-NCs, we conducted PL measurements at room temperature using a He-Cd (325 nm) laser for the excitation.

The PL properties were characterized by 325 nm He-Cd continuous wave laser, and the excitation power density was about 4.0 W/cm2.

Photoluminescence (PL) spectroscopy studies are carried out at room temperature using HORIBA Jobin Yvon LabRAM 800 HR (NJ, USA) with excitation wavelength at 325nm from He-Cd laser.

PL spectra were measured on a fluorescence spectrometer (FLS920 Edinburgh Instruments, Livingston, West Lothian, UK), using a He-Cd 325-nm laser as the excitation source.

The Raman spectra of the SnO x nanostructures were measured using a Jobin Yvon LabRam HR 800 UV system with a 325 nm He-Cd laser.