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The class-E amplifier has been simulated using Cadence circuit simulator with different HEMT structures.
The proposed circuit has been simulated using HSPICE simulator in 0.18-µm (level-49) TSMC CMOS technology.
As mentioned earlier, the proposed mechanism has been simulated using six different simulation topologies each with a different number of stations.
A circuit with 100 linear PDE devices (the equivalent circuit contains 8 million nodes) has been simulated using the parallel simulator in less than 1 h.
A single CNV marker has been simulated using 1,000 iterations (simulations), under the described scenarios.
The system has been simulated using the open source VIENNA system level simulator [24].
The operation of this gate has been simulated using a well-known single-electron circuit simulator.
The fibril-fibril elongation kinetics has been simulated using the Smoluchowski kinetic model, population balance equations, and the simulation results are in good agreement with the experimental data.
The system has been simulated using GEANT4.
The sub-panel has been simulated using ANSYS software.
The equivalent circuit has been simulated using SPICE software.
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