Exact(10)
Therefore, lower Rth 01,00) results in fewer hard errors.
Note that all these variations cause hard errors.
When the resistance distribution of state '00' crosses Rth(10,01), hard errors occur.
Again the resistance of the amorphous state decreases with the number of programming cycles and causes hard errors.
Hard errors occur when the data value stored in one cell cannot be changed in the next programming cycle.
There are two types of hard errors in PRAM: stuck-RESET failure and stuck-SET failure[20].
Similar(49)
Figure 8 Hard error mechanism of MLC PRAM.
Soft error rate is calculated at 105 s, hard error rate is calculated at 106 cycles.
The threshold resistance value affects the hard error rate as well and so the choice of threshold resistance has to be determined by both soft and hard error rates as will be described next.
We see that for a specific Rth 01,00), the hard error rate increases exponentially with number of programming cycles.
It also shows that for a specific number of programming cycles, lower threshold resistance results in lower hard error rate.
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