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Using XRD analyses, it is found that SiC amorphous phase is highly sensitive to the temperature and its crystallization physically grows with temperature increase.
First, the FR distance decay exponent grows with temperature so the distance dependence will become steeper as the temperature grows (since σE grows with temperature, VRMS is expected to be weakly temperature dependent).
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Using this method, crystals (>1 cm3) of HMX were grown with temperature lowering at the rate of 0.05 K hr−1 in the range 318 - 291 K.
Second, the energy barrier prefactor (eq 1b) is expected to grow with temperature.
These bands appear well defined only if the film has been grown with temperatures within 900°C and 1,150°C.
There are two cases of temperature influence on gas solubility are possible: (1) the solubility decreases with increasing temperature; (2) the solubility grows with increasing temperature.
As grain size gradually grows with increasing temperature, the distinction between these two components is expected to diminish, which may also explain the more rapid decrease in the strength with increasing temperature.
Thus, shits1 is likely modestly defective at 18°C and this impairment grows with increasing temperature until a threshold is reached at which paralysis is evident when driven in motorneurons.
On the other hand, the difference rapidly grows with small temperature changes.
The constraint on the protein function of Hsp90 grows with increasing temperature.
As its area grows, with a surface temperature near 7,000 K, the nova brightens rapidly.
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