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Second, the energy barrier prefactor (eq 1b) is expected to grow with temperature.
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Using XRD analyses, it is found that SiC amorphous phase is highly sensitive to the temperature and its crystallization physically grows with temperature increase.
Using this method, crystals (>1 cm3) of HMX were grown with temperature lowering at the rate of 0.05 K hr−1 in the range 318 - 291 K.
First, the FR distance decay exponent grows with temperature so the distance dependence will become steeper as the temperature grows (since σE grows with temperature, VRMS is expected to be weakly temperature dependent).
These bands appear well defined only if the film has been grown with temperatures within 900°C and 1,150°C.
There are two cases of temperature influence on gas solubility are possible: (1) the solubility decreases with increasing temperature; (2) the solubility grows with increasing temperature.
The nanocrystalline grains had a tendency to grow with increasing annealing temperature.
In nitrogen Si2N2O is formed primarily with morphology of whiskers and fibers which grow with time and temperature.
The results of XRD and ICP-AES show that the products were pure NiFe2O4 and also nanoparticles grow with increasing the temperature, while surfactant prevents the particle growth under the same condition.
The crystallinity increased and the crystal size in the nanorods grew with increasing temperature.
As grain size gradually grows with increasing temperature, the distinction between these two components is expected to diminish, which may also explain the more rapid decrease in the strength with increasing temperature.
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