Sharp peak, good intensity, and good retention time were observed in isocratic mode of elution.
The specific capacitance of the supercapacitors reaches ∼800 μF/cm2 at a voltage scan rate of 10 mV/s with good capacitance retention under mechanical bending.
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Good data retention of >105 s at 85°C under a small CC of 50 μA is reported [17].
Figure 9a shows that the IrO x /GeO x /W memory devices possess good data retention characteristics before and after annealing under a low CC of 100 μA.
The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >103 s with acceptable resistance ratio of >10 is also obtained.
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This suggests that Cu migration through the Al2O3 layer is observed under positive bias on the TE. Figure 7a shows good data retention characteristics of >103 s at CC of 500 μA.
The cross-point memory device has self-compliance bipolar resistive switching phenomena of consecutive 100 cycles with narrow distribution of high resistance state (HRS), low resistance state (LRS), good device-to-device uniformity, excellent P/E cycles of >10,000, and good data retention with resistance ratio of 100 after 104 s under a low operation voltage of ±3.5 V.
Further, the fabricated MOS capacitor with Pt nanodots exhibits noticeable programmable and erasable characteristics even under low voltages of ±8 V, a large memory window, and good charge retention at room temperature.
