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The phrase "good at endurance" is correct and commonly used in written English.
It can be used to describe someone's ability to endure or persist through difficult situations or challenges. For example: - "She was known for being good at endurance, always pushing herself to finish marathons and triathlons." - "The team's coach praised their players for being good at endurance, as they were able to maintain high levels of energy and focus throughout the long and grueling match." - "His job required him to have good endurance, as he often had to work long hours and handle physically demanding tasks." - "Although the hike was tough, her good endurance allowed her to reach the summit without stopping to take a break."
Exact(2)
So when I failed my exams I had this feeling of despair – until I discovered I was good at endurance.
This is a mouth-swab test that reveals information about what proportion of muscle-fibre type a person has: a lot of slow-twitch muscle-fibre type, which would make you good at endurance competitions, or a large proportion of fast-twitch muscle-fibre type, which makes you better at explosive or power events.
Similar(58)
They've been pretty good at the 24-hour endurance thing in the past, with 16 outright victories since the 1970s putting Stuttgart at the top of manufacturer leaderboard.
The device has also shown good read endurance of >105 times at a read voltage of 0.2 V (Figure 14b).
Table 2 Comparison of silicon oxide based RRAM devices with different fabricated methods Metal-doped SiO 2 Multilayer GO-doped SiO 2 SCCO 2 treatment Operation current Typical Typical Low Operation stability Good Good Good Endurance (times) >105 >1012 >105 Retention at 85°C (sec) >104 >104 >104.
This memory device shows good P/E endurance of >500 cycles at V read of 0.2 V (Fig. 6c).
The BLT thin films showed good fatigue endurance up to 3.5×109 bipolar cycling at 5 V and 50 kHz.
The devices have also shown good read endurance of >105 cycles and data retention at 85°C under a low CC of 50 μA.
Long retention (>104 s) at 85°C and good endurance with a memory window of HRS/LRS ≥ 40 were observed.
Age minimums at endurance races vary.
However, a good DC endurance with a stable resistance state and a high resistance ratio of >104 at a CC of 8 μA was observed in the high-Ge-content devices (S1).
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