Sentence examples for gate geometry from inspiring English sources

This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance.

The effects of the injection speed, the injection gate geometry, the blowing agent content, the melt flow rate and the use of talc as a heterogeneous nucleating agent on the formation and dynamics of cell bubbles were all explored.

Metal contacts were patterned by electron beam lithography, and 60 nm of palladium (Pd) contacts was deposited to form a back gate geometry transistor.

Therefore, the experiments were performed with three different gate geometries: linear shape (5 μm×100 μm), U shape (5 μm×1000 μm) and meander shape (10 μm×6000 μm).

Ballistic transport in p-type CNTFETs using quasi-planar gate geometries and higher on-currents to MOSFET has been proved by experiments [3, 4].

Furthermore, the NASPLAN code has been coupled with three different numerical optimisation methods in order to design the guidance of melt either by tuning the gates' geometry optimally or by introducing appropriate vacuum at specific areas.

Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects.

For better transistor performance, one possibility would be to employ a bottom-contact/top-gate geometry that increases the contact area from which carriers inject.

where N G is the number of gates (1 for the single-gate geometry and 2 for the double-gate geometry), κ is the relative dielectric constant of the gate insulator, t ins is the thickness of the gate insulator, W is the ribbon width, and α ≈ 0 is a dimensionless fitting parameter.

The employed lateral gate configuration leads to gate-wire capacitance values of ≈ 3 aF, whereas in the wrap-gate geometry, this capacitance is about 0.1 fF, thus ensuring a stronger coupling between the gate and the transistor channel.

The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG).