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Devices with long gate distances (dg = 1.84 μm) show a 3.2-times improved signal to noise ratio (voltage shift upon gas adsorption over signal variation) when compared to short gate distance devices (dg = 0.24 μm).
Despite a substantial increase in horizontal gate distance, vCOM was not significantly reduced over the analysed turn cycle (table 1).
For the analysed turn, no significant differences were found in turn speed for increased horizontal gate distance.
These two course settings represent the two extremes of the horizontal gate distance spectrum, common for similar conditions in WC ski racing.
This study was undertaken to investigate the effect of increased horizontal gate distance on energy-related and injury mechanism-related variables.
This change of the athlete's strategy might explain the fact that vCOM remains more or less unchanged over a wide section of the turn cycle, while during Completion, speed was lower for increased horizontal gate distance (figure 4).
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The developed fast and flexible fabrication run yields CNTFET devices with varying gate distances, improving gate coupling up to 25 times to previous own studies.
However, for increased horizontal gate distances, a medium effect for higher vCOM turn averages was observable.
Within this section, gate distances were modified after the first six runs.
This may be interpreted as a trend for higher variability in the racer's movement pattern on the course with increased horizontal gate distances.
During a video-based three-dimensional (3D -kinematic field measurement, a top world-class racer performed giant slalom runs at two course settings with different horizontal gate distances.
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