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Gate capacitance.
The parasitic gate capacitance was also studied.
To maximize the voltage drop in the tunnel oxide of T1, the gate capacitance of T2 (C2) must exceed the gate capacitance of T1 (C1).
Once the gate capacitance is calculated, τ s is given by [28].
L g instead of L was used when calculating the area for unit-area gate capacitance.
Furthermore, the gate capacitance was increased by reducing the gate-source distance.
These hybrid materials can enhance gate capacitance for accumulating more charge carriers in the channel.
Figure 6 Gate capacitance C g versus V GS for various tensile strains.
This is a direct consequence of both transconductance and gate capacitance variations with strain.
The on current is controlled by the semiconductor doping concentration and not by the gate capacitance.
The gate capacitance (Cg) and the transconductance (gm) are defined by [18, 19].
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