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This is due to the considerably low gas flow speed.
The gas flow speed is 3.6 m/s and the ions are acetone ions.
These results are caused by the increase in the gas flow speed and the consequent decrease of parasitic reaction, since the reduction of growth pressure results in increase in gas flow speed under the constant gas supply condition.
Moreover, a higher oxygen concentration suppressed the effects at a lower gas flow speed.
The extent of three-dimensional effects was inversely proportional to the gas flow speed or its square.
Linear dynamic range between 150 and 1000 ng of C and optimum carrier gas flow speed of around 0.1 mL/min were shown.
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For sufficiently wide samples, in the most range of gas flow speeds, the channel width had almost no effect on flame spread.
In a sufficiently wide narrow-channel, the variation of flame spread against the width of the material sample showed different trends for different gas flow speeds and oxygen concentrations.
Reactive magnetron sputtering is a highly sensitive process because the working point depends on a large number of process parameters (power, pressure, reactive gas flow, pumping speed, magnetic field strength, resputtered material, …).
Methyl lauric produced was analyzed using Gas Chromatography Hewlett Packard 5890 Series II, using column HP-1, carrier gas helium flow speed 40 mL/min, detector FID operating at 300 °C.
The effect of gas flow rate, impeller speed on the mean gas holdup is discussed.
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