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Band gaps values ranging between 2.71 and 3.14 eV were obtained from UV/Vis and DRS analysis.
The same trend was observed with the electrochemical band gaps, whose values were however found to be ca. 0.4 eV superior to the corresponding optical band gaps values.
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The band gap values were calculated.
Calculate primal, dual, and gap values of P2.
The corresponding security gap values are reported in Table 7.
The calculated band gap values are 1.28 1.62 eV, according with the theoretical band gap of CuInS2.
These gap values indicate the phase separation also to occur in this binary oxide.
However, CdTe films deposited at higher RF power has optimum band gap values (1.44-1.60 eV).
The optical band gap values, Eg, ranged between 3.57 and 3.68 eV.
The band gap values were determined from optical data for all samples.
Transmittance measurements yielded band gap values of 1.07 and 1.64 eV for CuInSe2 and CuGaSe2, respectively.
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