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Meanwhile, the optical band gaps value decreases linearly from 3.35 eV at x = 0 to 1.73 eV at x = 0.375, suggesting that Mn ions substitute for Ti ions uniformly and the ferromagnetism is not from magnetic Mn oxide impurities.
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The same trend was observed with the electrochemical band gaps, whose values were however found to be ca. 0.4 eV superior to the corresponding optical band gaps values.
Band gaps values ranging between 2.71 and 3.14 eV were obtained from UV/Vis and DRS analysis.
where Γ is the gap value.
The gap value can be defined as (Tibshirani et al.
The gap value Γ = 0.75 dB was considered.
It must be pointed out that the band gap value of as-deposited sample is less than the bulk AlN band gap value.
The effect of the quaternary band-gap value EG is also addressed.
The reduction of band gap value makes KBCNO ferroelectric a promising candidate for photovoltaic materials.
A maximum gap value ∼240 meV is obtained around ±4% strain.
Both films show an optical band gap value of about 1.09 eV.
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