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For the same composition, the band gap decreases with increasing ordering in the crystal, namely orthorhombic >tetragonal >cubic.
The modes are shifted and the polaritonic gap decreases with temperature.
It is observed the allowed direct band gap decreases with increasing substrate temperature.
The fundamental band gap decreases with increasing the number of monolayer n.
The UV-Visible spectroscopy analysis showed that the band gap decreases with increase in RF power.
The optical gap decreases from 3.9 to 3.5 eV when the annealing temperature increases.
With increasing antimony content the refractive index increases while the optical band gap decreases.
And the band gap decreases in electronic band structure with the decrease of the SW defect concentration.
However, the optimal angle is 0° for Scheme-II, because band gap decreases monotonically until disappears with the increasing angle.
The band gap decreases with C substituting and the number of charge carriers increases in low bias voltage.
It was found that the band gap decreases with the increase in size of the B-cation.
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