Sentence examples for gain cut off from inspiring English sources

Small signal microwave characterisation shows a decrease (from 18.6 to 9 GHz) and an increase (from 18.4 to 28.8 GHz) of the current gain cut off frequency after SiO2 and Si3N4 passivation, respectively.

RF parameters such as intrinsic gate to source and gate to drain capacitances Cgs and Cgd, intrinsic gate to source and gate to drain resistances Rgs and Rgd, the transport delay τm, the unity gain cut off frequency (fT) and the maximum frequency of oscillation (fmax) are also computed using the Non Quasi Static(NQS) approach.

A simple weight gain cut off of 2 kg at 3 weeks has also been examined for bipolar disorder [ 16].

However, these gestational weight gain cut off points were defined using limited data available at that time.

For example, for Milan it was found that 70% of gain is cut off in summer, while only 40% is cut off in winter by using optimum shading, which is desirable.

The major figures of merit (FOMs) such as transconductance (gm), output conductance (gd), transconductance generation factor (TGF), early voltage (VEA), intrinsic gain (AV), cut off frequency (fT) are analyzed in this paper.

The impact of T on various performance metrics like on current (Ion), off current (Ioff), on off current ratio (Ion/Ioff), subthreshold slope (SS), Q-factor, intrinsic gate delay, energy delay product (E⋅τ), transconductance (gm), output conductance (gd), intrinsic gain (AV), cut off frequency (fT) and sweet spot have been analyzed extensively to benchmark the device behaviour.

The impact of operating temperature (T) on various performance metrics like on current (Ion), off current (Ioff), on-off current ratio (Ion/Ioff), transconductance (gm), output conductance (gd), intrinsic gain (AV) and cut off frequency (fT) is also subjected to extensive analysis.

Figure 11c shows the flexible solution-based graphene transistors at GHz frequencies with a current gain cut-off frequency of 2.2 GHz and a power gain cut-off frequency of 550 MHz [217].

A 2 × 35 μm HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 310 GHz at a drain–source voltage of 1.1 V.

Unity gain cut-off frequencies (fT's) above 190 and 180 GHz were obtained for D-HEMTs and E-HEMTs, respectively.