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Further, annealing in deionized water at 100°C produced membranes with optimum salt rejection.
Further annealing the Al-coated sample at 800 °C in air, the Al3+-doped LNMO can be obtained.
Further annealing at 673 K increases the grain size and causes a reduction in the value of the zT peak to 0.4.
Self assembly is only continued by further annealing.
Further annealing at higher temperature results in recovery of the CPD.
Further annealing to 500 °C caused the intensity of the DLE peak to decrease relative to the NBE with all components reducing.
After further annealing at 300°C for 0.5 h, the maximum short current density under illumination could be raised to 5.03 mA/cm2.
Further annealing at higher temperature enhances the intensity of peak at 26.6° corresponding to (111) plane of the cubic phase, and the intensity of other peaks is reduced.
Further annealing to 500 °C caused the n-type defect concentration to reduce further with a corresponding increase in nanosheet resistance not compensated by any further sintering.
The calculations of individual time constants show that electron-hole recombination as well as generation rates become double after RTA at 700°C and do not change significantly for further annealing.
Further annealing at 800 °C and then at 1750 °C irreversibly transforms it to a monoclinic and hexagonal phases, respectively, and the last two phases can be interconverted by adjusting the annealing time and temperature.
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CEO of Professional Science Editing for Scientists @ prosciediting.com