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No furnace, vacuum chamber or any metal catalyst were used in this experiment.
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The Ni-coated PAN/SiO2/Si samples were pyrolyzed in a high-vacuum furnace; the vacuum level in the furnace was roughly 10-5 Torr.
The CVD system consisted of a horizontal quartz tube furnace, a vacuum system, an intake system, and a water bath.
The growth system comprises a large horizontal quartz tube furnace, a vacuum system, a gas meter, and a temperature controller.
Some parts of as-deposited a-Si H films were therma-Si Hnnealed in a filmsce in vacuum conditions for 30 min at 950°C (see for details Table 1).
The growth system was composed of a large horizontal quartz tube furnace, a vacuum system, a gas meter, and an automatic temperature controller.
After removing the photoresist with acetone, the samples were annealed in a furnace under vacuum (10−4 torr) with Ar flow (500 sccm) at 400 °C for 3 h to remove PMMA and photoresist residue.
The integration of a modified induction cold crucible and a gradient heatable permanent metallic mold in a centrifugal casting furnace under vacuum are the main features of this process.
The post-fusing treatment was performed using a vacuum furnace, an electric furnace, or an induction heating system.
With more reactive metals, annealing can be done in a vacuum furnace.
This creates a porous material, titanium sponge, which is crushed and melted in a vacuum furnace to yield titanium ingots.
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