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A Trp427Phe substitution however did not adversely affect transport in either assay, implying a bulky hydrophobic residue at this position is sufficient for normal functioning of the gate.
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b Tunneling current as a function of the gate thickness at different oxide fields.
Fig. 8 a Tunneling current as a function of the gate thickness at different channel fields.
The evaluated A eff is reported as a function of the gate bias in Figure 2c.
Fig. 1 The tunneling current as a function of the gate voltage with the oxide thickness of 10 nm.
Back-gate dependence measurements were conducted at room temperature by varying the DC two-terminal current as a function of the gate voltage.
Figure 5b shows the measured electron transconductance, gm (where gm = ∂Ids/∂Vds), of the GFET as a function of the gate voltage.
The results are plotted in Figure 5a. Figure 5 On/off current ratio I on / I off as a function of the gate bias.
Finally, it is shown that the behavior of the noise spectral density as a function of the gate voltage depends on the characteristics of the device.
The fabrication process of a surface channel device with proper threshold voltage (Vth) directly depends upon the work-function of the gate electrode.
This paper reports the withstanding capability of unclamped inductive switching (UIS) of high voltage GaN-HEMTs as a function of the gate voltage in the off-state.
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