Proof Let f { c } line be the function of the line passing through the point C. Assume the case f { c } line ≤ f.
Given the function f : R → R, let f { a, b } line : R → R be the function of the line passing through the points ( a, f ( a ) ) and ( b, f ( b ) ) of the graph of f.
Based on two strengthening mechanisms, variations of the strength as a function of the pass numbers were related to the calculated dislocation densities and the average boundary spacing.
Based on these mechanisms, variations of the hardness and yield stress as a function of the pass numbers were related to the calculated dislocation densities and the average boundary spacing.
These results are supported by EIS measurements that document an increase in the double-layer capacitance as a function of the charge passed.
The measurements provide confirmation of the positions of the phase boundaries in the (Li/NaS/S) system, and also allow calculation of the emf of a hypothetical (Li,Na)/S cell as a function of the charged passed.
Cyclic voltammetry (CV), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS) were used to measure changes in electrode response and surface chemistry as a function of the charge passed and applied current density.
Given the function f : R → R, let f { a, b } line : R → R be the function of the chord line passing through the points A ( a, f ( a ) ) and B ( b, f ( b ) ) of the graph of f.
The function of the band pass filter is to pick the oscillation component which is around the resonant frequency of the LC filter and attenuate the steady state value and switching noises.
The absolute thresholds for long-duration narrow-band noise stimuli are shown as a function of the band-pass center frequency by the fine lines and circles in Fig. 4. Data are averaged across three vampire bats; error bars represent standard errors.
