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Furthermore, the Ioff current can be improved by bottom gate pattern to reduce the leakage path from the gate to the source and drain.
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An increase or decrease of the gate voltage with respect to the source causes the depletion region to expand or shrink; this in turn changes the cross-sectional area available for current flow from source to drain.
The self-aligned technology provided a design, where one or more gates were extended from the source to the drain [2 4].
Applying a voltage to the gate, however, attracts so-called charge carriers into the region above the gate, where they allow a freer flow of current from the source to the drain.
d Gate to source isolating spacer.
The gate, drain and source in the device are made from cotton threads with conductive or semiconductive behavior induced by using nanoparticle-based coatings.
The electric field in the transistor channel induced by the gate has to compete with the field from the source and drain regions.
The gate width, gate-source spacing, gate length, and gate-drain spacing were 50, 4, 2, and 4 μm, respectively.
As a result, HfO2 layers were remained under TEOS spacers and this decreased energy band of the source region because of increased fringe field from the gate when gate bias is applied [28].
The Hotel Adlon Kempinski seen from the Brandenburg Gate.
One source is the surface states associated with electrons injected from the gate.
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