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Role of ion beam sputtering induced surface etching is emphasized in formation of ripples.
Formation of ripples is more pronounced in large aspect (length/width) ratio platelets or nanobelts.
Mechanism of formation of ripples and dislocations during sonication was proposed.
The prominent role of the a/c interface in formation of ripples is established in this work.
The formation of ripples in both the systems is simulated and analyzed using two-dimensional vibrating membrane model.
Formation of ripples at top surface is a consequence of mass rearrangement at the a/c interface induced by incompressible solid flow inside the amorphous layer.
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The studies on the initial evolution of Ge ripple structures on Si (1 1 10) have suggested that the step-flow process led to the formation of ripple structures [20].
For the case of InP bombarded with 1.5-keV Ar ions, we have observed the formation of ripple pattern at 63° angle of incidence [4].
Zhou et al. studied the formation of ripple using a focused ion beam (FIB -scanning electron microscope setup using 30-keV Ga+ on the Ge(001) surFIB -scanning
The formation of ripple structures on KBr surfaces as a function of the incidence angle and energy has also been observed.
The irradiation at oblique angle (20° and 40°) leads to the formation of ripple structures on the surface with a wave vector parallel to the ion beam direction.
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