The differences observed when compared to formation of buffer-insoluble aggregates at the various RH were more pronounced.
The magnitude of the structural changes in tendency parallels the solid-state instability data (i.e., formation of buffer-insoluble aggregates, inactivation, and loss of native conformation upon reconstitution).
We then monitored various stability related parameters as a function of time, i.e., loss in monomer concentration (by SEC-HPLC), residual specific activity of soluble α-CT, formation of buffer-insoluble aggregates, tertiary structure intactness of soluble α-CT (by CD spectroscopy), and structural dynamics (by FTIR H/D exchange).
We found that vascular plant species richness and taxonomic diversity were affected by an interaction between buffer strip width and time since the formation of the buffer strip.
Opposition officials said the Free Syrian Army, the Syrian National Council and the Turkish government had been engaged in talks in recent days over the formation of a buffer zone in the event of a huge number of refugees.
In the latter case, Si weak flux and formation of a buffer layer may be useful to prepare a good enough Si 001) surface before Ge deposition.
Describing the primary objectives of the movement, Graham (1980) maintained "the first objective was the formation of a buffer of 'non-aligned' states in opposition to external pressure to take sides in the Cold War.
The subsequent addition of NH4F leads to the formation of a buffer solution, which is efficient in the removal of silicon products.
This procedure is very promising but has the drawback of the formation of a buffer layer consisting of a graphene-like sheet, which is covalently bound to the substrate.
This study suggests that coordination complex formation of the buffer with 111In is less important for efficient labelling of DTPA- and DOTA-conjugated compounds since the labelling in the weakly coordinating buffers MES and HEPES was more efficient than that in acetate buffers in most cases or at least equivocal in the case of DOTA-octreotide.
The process comprised nitrogen plasma immersion ion implantation at the pulse bias of −25 kV, 3 μs to the incident dose of 3×1017 atom/cm2, followed by formation of (Ti+TixNy) buffer layer using ICP-magnetron PI3D at the pulse bias of −5 kV, 3 μs.
