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High surface area fibers have potential for use in fabrication of fiber reinforced ceramics, in high-efficiency filters and in chromatographic bioseparations.
Silicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling.
The Cast Products segment represents its worldwide cast house system, which are made from molten aluminum, purchased primarily from its Aluminum segment, which is then formed into various value-added ingot products, including billet and slab, for use in fabrication operations in a variety of industries.
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Mechanical properties of the PCL/CultiSpher material and in vitro degradation rates indicate the potential usefulness of this novel composite for use in the fabrication of nerve guides.
Directly fabricated Fe-Al thin-walled structures were found to possess high metallurgical quality in terms of porosity, but despite their good overall visual appearance, very large cracks were observed after the manufacturing process, which disqualifies them for use in the fabrication process of any mechanical parts.
Simrit is introducing two new fluorocarbon (FKM) compounds which have been created specifically for use in semiconductor fabrication processes.
Use of the cell is demonstrated in a study of the structure of a nickel oxide material anodically deposited on a graphite substrate which contains multivalent nickel states and appears promising for use in the fabrication of ultracapacitors.
The researchers focused on CuPc because it can be easily processed into a thin film for use in device fabrication, which makes it an attractive qubit candidate, said Marc Warner, a former doctoral student at the London Center for Nanotechnology and the lead author of the study, which appears in Nature.
High precision chemical analysis of obsidian imported for use in the fabrication of cutting tools is used to reconstruct the growth, size and extent of San Lorenzo's interregional exchange networks with areas of Mexico and Guatemala where obsidian occurs as raw material.
The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.
Among the II I Vsemiconductor materials, because of their unique advantages, such as narrow direct bandgap, small carrier effective mass, and the highest carrier mobility, III-antimonides have strong potential for use in the fabrication of mid- and long-wave infrared photodetectors [4], low-power high-speed transistors [5 7] and in the study of fundamental quantum physics [8 10].
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