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This point is crucial for electronic synapse applications [16].
Additionally, non-volatility usually required for electronic synapse is not mandatory for neuron emulation that can utilize volatility to implement leaky integrate-and-fire dynamics.
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In addition, the small form factor and low energy consumption of 2-PCM make them comparable to biological synapses, which makes phase change memory a promising candidate for electronic synapses in large-scale neuromorphic system applications.
The emulated long-term potentiation/depression as well as STDP functionalities indicate the suitability of nanoscale TiN/HfO2/Pt memristor devices for the role of electronic synapses and thus they can be used for hardware implementation of hybrid CMOS/memristor neural networks (CMHNN).
In this work, the control of the conductivity of MIM structures was investigated in order to determine their suitability for the implementation of electronic synapses in neuromorphic circuits.
According to Fig. 16, an electronic synapse consists of one PCM device responsible for the LTP and another PCM device in charge of the LTD.
Then, we present different types of nanoscale electronic synapse using phase-change devices as well as their respective advantages and disadvantages for neuromorphic applications.
a Analogy between the biological synapse and the electronic synapse based on the Pt/HfOx/ZnOx/TiN memristor device.
However, the nanoscale electronic synapse based on PCM technology seems to be more promising than its compatriots, as phase-change materials has already gained widespread applications from the conventional optical disc [33] to the recently emerging all-photonic memory [34], and PCRAM is considered as the leading candidate for the so-called universal memory for NVM applications [35, 36].
In their neuromorphic circuit, the pre-post spikes generated from an arbitrary waveform generator are connected to the top and bottom electrodes of an electronic synapse.
In this case, the net electric potential applied across the electronic synapse is equal to the difference between the magnitude of pre-spike and that of post-spike.
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