Sentence examples for flux interruption from inspiring English sources

In addition, by growing ZB GaAs after the insert using a flux interruption, we demonstrate the growth of all combinations of crystal phases of the GaAs segments on both sides of the GaAsSb insert.

The contact angle was controlled by introducing different flux interruptions and tuning the V/III flux ratio.

The resulting redirection of excess carbon flux caused by interruption of the TCA cycle via switching gltA OFF improved isopropanol production titer and yield up to 3.7 and 3.1 times, respectively.

The greatest of all portraitists – a Rembrandt or a Goya – caught their subjects as if temporarily halted between a before and an after: an interruption of the flux of life rather than a becalmed pose.

However, it has been not clarified whether this cell death is attributable to an interruption of autophagic flux.

We consider the ND-like features of degenerating NB cells attributable to an interruption of autophagic flux caused by a loss of intact lysosomes through LAPTM5-mediated lysosomal destabilization, although we can not exclude the existence of some other mechanism, given results of studies where autophagic flux or lysosomal degradation were genetically disrupted in mice [27], [28].

While autophagy is a membrane-trafficking pathway to degrade the proteins in lysosomes, the LAPTM5-mediated lysosomal destabilization with LMP leads to an interruption of autophagic flux, resulting in the accumulation of immature autophagic vacuoles, p62/SQSTM1, and ubiqitinated proteins as substrates of autophagic degradation.

Primary nasal epithelial cells from the 3 CF patients exhibited low BECN1 protein levels together with a 2.5-fold increase of the autophagic substrate SQSTM1 in the insoluble protein fraction, as compared to controls (Fig. 5 A to C), indicating an interruption in autophagic flux.

The lysosomal dysfunction caused by LAPTM5-mediated LMP might lead to an interruption to basal autophagy flux, probably resulting in the increased number of immature autophagic vacuoles.

(b) GaAs surface after Ga-LDE at minimized As background flux F As<1×10−8 Torr by a 1-h growth interruption with the As cell switched off before etching.

A growth interruption of 10 min at 350°C under a constant As flux is then performed.