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VCVSIs output voltage fluctuation may be caused by abrupt or periodic changes of the load current that are significant.
This fluctuation may be captured by yield variability.
This fluctuation may be due to blocking temperature that is very close to room temperature.
The on-current fluctuation may be caused by the randomness of As dopant positions in the S/D extensions and hence is inherent in ultra-small NW transistors.
In contrast, the on-current fluctuation may be inherent in ultra-small NW transistors because interatomic distance is determined by random atomic movement.
When the impeller configuration is nearly halfway staggered, the distribution of pressure fluctuations in the volute casing becomes more uniform than the other impeller configurations, and the level of pressure fluctuation may be reduced by up to 50%. .
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The associated pressure fluctuations may be undesirable.
In the future, increasing winter temperature fluctuations may be the new norm in areas such as the Northeast.
The global pressure fluctuations may be explained by Sasic's model.
This difference in the ability to reduce fluctuations may be of importance in the design of genetic networks.
We investigate how time asymmetry of cross-correlation functions of concentration fluctuations may be exploited to determine reaction fluxes at the cellular level.
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