Sentence examples for flat shift from inspiring English sources

There are plenty of unfulfilled moments, as when four dancers, crawling flat, shift perspective by seeming to transform the floor into a wall.

Between April 2003 and October 2004, the middle intertidal flat shifted from an erosional to an accretionary state, whereas the reverse was true on the lower intertidal flat.

The peak-flat shift rate (mu_{text{pf}}) and the flat-valley shift rate (mu_{text{fv}}) can be expressed by similar equations.

The P/E characteristics of the memory device were also investigated by measuring the flat voltage shift (ΔV fb) induced by a pulsed P/E voltage.

Compared to the platinum plate, the i-E curves of the chemically modified flat silicon shift to negative potential in the platinum bath (Figure 1a).

In the ensuing years, Mr. Rickey set in motion all kinds of geometric configurations -- wavering stacks or grids of flat squares, shifting open rectangles, zigzagging beams, spinning shell-like forms.

Critics carp that a flat tax shifts the burden to poorer people, particularly as the changes which took effect in January include a rise in some sales taxes and a repeal of the Earned Income Tax Credit, which pads the wages of the working poor.

This indicates that the hysteresis is not due to interface traps, as they generally give rise to frequency-dependent flat-band shift and stretching of C-V characteristics [24].

The magnitude of trapped charge density can be estimated using the relation [24] N charge = Δ V fb × C ox / q A, where ΔV fb is the measured flat-band shift, C ox is the total oxide capacitance, q is the electronic charge, and A is the top contact area.

(a) High-frequency (500 kHz) C-V characteristics of Al/SiN/HfO2/SiO2/Si MIS structures with Ge-NCs embedded in the SiN layer with HfO2/SiO2 stack tunnel dielectrics stack layer implanted at two different energies of 3 and 5 keV, along with the control sample, (b) variation of memory window (calculated from flat-band shifts) as a function of absolute sweep voltage.

Figure 6 (Color online) High-frequency (100 kHz) C-V characteristics of Al/Si 3 N 4 /SRSN/SiO 2 /Si (MNNOS) memory capacitors of (a) the sample S4 containing 33 at.% of excess silicon, (b) the sample S2 containing 25 at.% of excess silicon, (c) evolution of memory window (calculated from flat-band shifts) versus excess silicon at two different annealing temperatures (1000 and 1100°C).