The ram memory block models the SRAM memory, and the flash memory block, the FLASH memory.
Figure 2 presents the highest-level view of the model, which is composed of the following building blocks (pages, see Section 3.2): flash memory, ram memory, fetch/decode, and execute.
His new invention was dubbed "flash" memory, because it allowed entire sections of memory to be erased quickly and easily, by applying a voltage to a single wire connected to a group of cells.
A voltage is applied to the cell to change the value back to 1. Flash memory is configured such that large sections of a chip, called blocks, or even the entire chip can be erased at a time.
Based upon the NAND flash memory device model described in "NAND flash device model" section, we use 2 bits/cell NAND flash memory with the following device parameters as a test vehicle.
In this section, we employ the MLC NAND Flash memory channel modeled in[10, 11], where random telegraph noise[12], the incremental step pulse programming[13], cell-to-cell interference[14], and non-uniform quantization[15] are considered.
In "Low-energy error correction scheme for NAND Flash memory" section, we analyze the total energy consumption of NAND Flash memory with LDPC code based soft-decision decoding and also propose an LDPC decoder-assisted precision selection method.
In this section, we analyze the energy consumption of reading 2-bit MLC NAND Flash memory.
Moreover, before flash memory can be written, it must be erased, and since individual words cannot be erased, entire sections of the flash must be erased as a unit.
