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It was found that the average roughness across the contact zone decreased as the width of this zone was increased, but that these reductions were only modest.
Some other researchers found that the average roughness and surface damage of single-crystal copper and silicon varied with crystal orientation in experiments [3, 4].
The average roughness found was of 102.4 μm with standard deviation of 18.6.
Corresponding average roughness was found to be 72 nm for D+, 47 nm for D−, and 3 nm for glass control.
All films were found to be similarly smooth with average roughness between ca. 0.3 and 0.8 nm (Additional file 1: Figure S3).
The wall superheat during saturated pool boiling at atmospheric pressure was found not to vary consistently with surface average roughness (Ra) values.
From the topography image, the peak-to-valley surface roughness was found to be 722.7 nm with an average roughness of 127.4 nm.
Both the average roughness and the grain size were found to be lower at low substrate temperature.
The pattern and the correlation length of rough surface were checked and found to have no effect on the relation of wear volume and change of average roughness.
It was found that a combination of roughness parameters should be considered for a proper surface analysis instead of only using average roughness and root mean square.
The surface roughness (arithmetic average roughness) of the parts is 0.0002 mm.
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