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Layered film structures are widely applied in industry.
The film structures are evaluated by X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, and Raman spectroscopy.
The electrochemical properties of the different film structures are characterized in 1 M KOH aqueous electrolyte and in ethylene glycol based electrolytes.
As the sizes of transistors are scaled down to submicron regime, new materials and multilayered thin film structures are applied, which pose a great challenge to quantify the adhesion energy of the interfaces in order to optimize the structures of the multilayered thin films.
This is especially true in microelectronic applications where very small lateral as well as depth dimensions of device features and film structures are involved.
However, in the case of the growth of SiC on graphene, the grain-like film structures are continuous without any cracking structure.
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The film structures were characterized by X-ray diffractometer (XRD).
Chemical composition and film structures were investigated by Fourier transform infrared spectroscopy and X-ray diffraction.
The pentacene film structures were found to significantly affect the performances of pentacene field-effect transistors (FETs).
The film structures were analyzed by both reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM).
A range of film structures were obtained by changing the nitrogen mass flow rate during deposition, and the film structures were determined using electron energy-loss spectroscopy.
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