Sentence examples for film precursor from inspiring English sources

It's the latest entry in the faux-video-diary genre; its great film precursor, of course — a work in another domain altogether — is "David Holzman's Diary," from 1967.

The FTIR spectrum of TiO2 °C00 °C) powder prepared from the film precursor contains a single broad high-intensive absorption band at 1000 370 cm−1 with a maximum at 550 cm−1 associated with the Ti O stretching vibrations.

Although generation of polycrystals is sometimes associated with surface migration of a precursor on masks, our observation suggested that polycrystals are generated when the gas-phase concentration of a film precursor just above masks exceeds a critical value.

The HMDSN monomer, used as film precursor, was carried to the jet nozzle by an auxiliary airflow and mixed with principal argon flow.

Table 1 The optimized process parameters of deposition for La 1 − x Al x O 3 film   Precursor Deposition Precursor Oxidant Precursor Oxidant temperature (°C) temperature (°C) pulse time (s) pulse time (s) purge time (s) purge time (s) La 180 280.3.3 0.3 4 8 Al 25 0.1 0.1 3 4.

A simplified version of the model that includes only transport phenomena and a unity sticking coefficient of the limiting film precursor (TMG) to the surface of the growing film was found to accurately capture observed film deposition variations in an early variant of the Thomas Swan close-coupled-showerhead 3×2″ reactor.

The generation of such crystals should be avoided because they act as uncontrollable sink of film precursors.

The gas phase species including hydrogen, oxygen and SiHx fragments are incorporated into the SiO2 film as the film precursors.

The ion bombardment effect of the increasing H species on the SiH x radicals during the growth process reduced the surface diffusion length of film precursors, and these precursors could not reach their favorable growing sites, leading to the formation of more microvoids with amorphous components in the nc-Si H film.

The TPE is a process to deposit a solid thin film from a thin liquid layer, while film precursors are being fed from the gas phase into the liquid layer to maintain the quasi-equilibrium between the growing solid layer and the overlying liquid layer.

For synthesis of CTS films, precursor films are first deposited by dip-coating and then thermolysed at 200 °C in air for 10 min.