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If the quantum wells are in an electric field, as they are within the built-in filed of GaAs pin structures, in our samples, thermally escaped holes will rapidly be swept away giving rise to a fast component of photocurrent.
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Additional file 1: Figure S2 shows the photoluminescence spectra of the GaAs (100), (110), and (111), and Additional file 1: Figure S3 shows the Raman spectra of GaAs (100), (110), and (111) substrates, respectively.
(GaAs chips are also more resistant to radiation, a factor in military and space applications). Although GaAs chips have been used in supercomputers for their speed, the brittleness of GaAs has made it too costly for most ordinary applications.
Wood, C. E. C. RED intensity oscillations during MBE of GaAs.
Ahrenkiel, R. K. et al. Minority Carrier Lifetime of GaAs on Silicon.
Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111 2x2.
Although GaAs chips have been used in supercomputers for their speed, the brittleness of GaAs has made it too costly for most ordinary applications.
Bluhm, H. et al. Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 μs.
Bluhm, H. et al. Dephasing time of GaAs electron-spin qubits coupled to a nuclear bath exceeding 200 µs.
Chips made of GaAs have several desirable properties, because the electrons in them are extremely mobile.
Figure 1 SEM images of GaAs NWs.
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