Sentence examples for facet length from inspiring English sources
The initial {001} SiGe facet length influence the growth rate of step height.
The growth rate of SiGe step height is influenced by initial {001} SiGe facet length (measured the fifth Si marker).
The X-ray structure of bacteriophage PRD1 revealed that the lipids are asymmetrically distributed between the two leaflets and facet length is controlled by a tape-measure protein.
In Fig. 7a, the initial {001} SiGe facet length is 66 nm and the step height of cycle 5 to cycle 6 is 11.4 nm.
In Fig. 7b, the initial {001} SiGe facet length is 39 nm and the step height of cycle 5 to cycle 6 is 7.8 nm.
In Fig. 6, the step height of cycle five to six (above the recess) increases with longer initial {001} SiGe facet length.
The assumed morphology is consistent with atomic force microscopy images (unpublished data) and with the TEM images, which show unequal projected facet lengths at the goethite crystallite tips (see Sec. III A).
We have made efforts for the measurements of comparatively large, single gold nanotriangles (inset Figure 5), the height of the nanotriangles was about 140 nm, however, the facets length varies from 130 to 350 nm (Figure 5).
On the sagittal slice at the middle of the medial patellar facet, patellar length (PL) and patellar tendon length (TL) were measured and the patellar length ratio (PLR = PL/TL) was then calculated.
Force measurements on different-sized heliostat mirrors at a range of heights found that both peak lift and hinge moment coefficients, which are at least 10 times their mean coefficients, could be optimised by stowing the heliostat at a height equal to or less than half that of the mirror facet chord length.
Here, we investigate metastable SiNy solid solubility in TiN and probe the effects of surface segregation during the growth of TiSiN films onto substrates that are either flat TiN 001)/MgO(001) epitaxial buffer layers or TiN 001) facets of length 1 5 nm terminating epitaxial TiN(111) nanocolumns, separated by voids, deposited on epitaxial TiN(111)/MgO(111) buffer layers.
