Sentence examples for faces oriented from inspiring English sources

This resulted in images of uniform size containing faces oriented approximately the same way.

On the faces oriented nearly perpendicularly to the substrate, there is visible tendency to their arrangement in the form of parallel rows, which is probably related to the crystallography of the grains (Fig. 14a, b).

The surface roughness on the tool rake face is 0.8 nm (Ra) and lapped cutting edge radius is 35 50 nm as achieved when (1 1 0)–(1 0 0) orientations are selected as rake and flank faces; and the rake face surface roughness is 0.7 nm (Ra) and lapped cutting edge radius is 30 40 nm as the rake and flank faces oriented with (1 0 0)–(1 0 0) combination.

In this genotype, the multi-lobular 'pouched' structures do not form and the main masses of tissue (asterisks in Fig. 2B″) appear fairly solid with their apical, Crb-positive faces oriented outward (compare Fig. 2A″ to 2B″).

11B and 12) may be the surfactant-active configuration, which inserts into the membrane so that its N-terminal sequences (1 7) are immediately subjacent to the polar lipid headgroup, and its amphipathic N- and C-terminal helices are bound at the lipid-water interface with their hydrophobic faces oriented inward [30], [44], [97], [103].

All three of these inner moons are tidally locked, keeping the same face oriented toward Jupiter.

They are represented in a square matrix format named face oriented relation matrix (FORM).

The ligands bind with their β-face oriented towards the heme group and C19 carbon within 4.3 Å from the iron atom.

This particular example shows that, unless we consider each reflector as the combination of two of oppositely-facing oriented reflectors, we cannot be sure that the occlusion problem can be disambiguated.

b Outcrop of interbedded sandstone and hard shale, fold axis plunges 21° in the 120°direction, upper limb beds dip 46° SW, and strike 102° (outcrop face oriented 068°, located at 518940E, 2208249N).

Single side polished on the <100 > face oriented and heavily doped p-type Si wafers (0.8 to 1.0 mΩ·cm resistivity, B-doped, from Siltronix Corp., Archamps, France) are electrochemically etched in a 3 1 (v/v) solution of aqueous HF (48%, Merck, Whitehouse Station, NJ, USA) and ethanol (99.9%, Merck) at a constant current density of 385 mA cm−2 for 30 s.