While standard CMOS-based digital design provides substantial flexibility during pre-silicon design phases, the characteristics of the gates are set by fabrication variations and environmental conditions and cannot easily be changed at runtime.
Due to the diversity of suppliers and fabrication process variation of composite parts, dimensional variability of composite fuselages inevitably exists.
In this manner, the competent combination of PFI and analog circuit simulation successfully leads us to the corrective action to improve the circuit design and overcome the inevitable fabrication process variation.
The main reason is fabrication parameter variation, such as grating depth of TiO2.
The predictive feature of BSIM3 makes statistical modeling of the device in the presence of fabrication process variations considerally simpler.
We investigated the root cause of a via high resistance issue due to fabrication process variations and mismatching design rule.
To avoid fabrication-related variation of the hybridization signals the hybridization assays were performed on the same chip, initially with RNA and subsequently, after regeneration of the microarray (by heating to 70°C in pure hybridization buffer), with the corresponding DNA targets.
Therefore, such devices have to be engineered for a greater fabrication-induced variations, and certain fundamental properties have to be simulated/characterized separately in each case.
Mechanisms for the field-induced fabrication and structural variation of LANDs in the polymer matrix are elucidated in relation to enhancement of the physical properties.
Furthermore, we have calculated the fabrication tolerances, the variation of birefringence value is very small by varying the air hole diameters of the fiber.
