Sentence examples for extend defects from inspiring English sources

Since the extend defects (stacking faults or dislocation) are not expected to be eliminated at such a low annealing temperature, they are not likely to be the origin of VL.

Future work needs to reveal to which extend defects in the apparently widespread ordered inheritance of peroxisomes in mammalian cells are involved in the group of severe human diseases known as peroxisomal biogenesis disorders [31].

Strong thermal gradients in low-thermal-conductivity ceramics may drive extended defects, such as grain boundaries and voids, to migrate in preferential directions.

This paper presents a review of literature concerned with the vibration modelling of rolling element bearings that have localised and extended defects.

It has recently been shown by SSRM mapping, performed in cross-section, that extended defects in 3C-SiC cause a localized lowering of the resistance through the layer [16].

Extrinsic gettering refers to gettering that employs external means to create the damage or stress in the silicon lattice in such a way that extended defects needed for trapping impurities are formed.

HRTEM studies of multilayer Ge/Si heterostructures with buried arrays of Ge huts have shown that the domains of stretched lattice occurring over Ge clusters in Si layers at high Ge coverages usually do not contain extended defects.

In particular, for growth of non-polar m-plane GaN/AlGaN multi-QWs, extended defects introduced by the epitaxial process, such as stacking faults or dislocations, were not observed [13].

The other driving force which attracts also academic institutions and research institutes is the high complexity of the phenomena, involving the interaction of dopants, intrinsic point defects, extended defects and impurities like carbon as well as the interactions of mobile defects with surfaces and interfaces and their redistribution in multilayer structures.

Data of HRTEM studies evidence that extended defects do not arise at low hGe on the buried Ge clusters and perfect epitaxial heterostructures with quantum dots form under these conditions that enables the formation of defectless multilayer structures suitable for device applications.

It was shown that the most pervasive extended defect at 3C-SiC(111) surfaces, the stacking fault, can be passivated by UV irradiation treatment.