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The evolution of the voltage during the Er-doping process was recorded for all samples and plotted for samples with the same thickness for comparison.
Figure 1b shows the evolution of the voltage and surface temperature of a 12 Ω/sq nanowire electrode as 17 mA/cm2 of current was passed across it.
One famous example is the FitzHugh Nagumo model [13, 14], which is a simplified two-dimensional dynamical system that describes the evolution of the voltage potential and a single coupled slow gating variable.
The evolution of the voltage signal with time during galvanostatic anodising of bulk Ti has been repeatedly reported in the literature to exhibit a striking local maximum, followed by a decrease in the slope of the V t curve.
The time evolution of the voltage of a spiking neuron is modelled by a stochastic process, V, given as solution to the following stochastic differential equation (SDE): d V ( t ) = ( μ − V ( t ) τ + A sin ( ω t ) ) d t + σ d W ( t ), t 0 = 0 ; V ( t 0 ) = v 0, t n = inf { t > t n − 1 : V ( t ) = v th } for n ≥ 1, { V ( t n + ) = v 0, J n = t n − t n − 1. (1).
\cr & {\rm{with }}E = {V_T} + {{{V_T} - {E_L}} \over {{\Delta _T}}} \cr} $$ \end{document} We assume that the evolution of the w-variable is much slower than the evolution of the voltage V.
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The methods presented in this paper rely on continuous models for the evolution of the voltage-traces and the hidden variables of a neuron.
The effects of oxygen evolution on the voltage-time response and film morphology during galvanostatic anodizing of AA 2024-T3 atloy at 50 mA cm−2 in sulphuric acid have been investigated at −2 and 24 °C.
In this article, time evolutions of the voltage applied to a target and current through the target for a conventional modulator with only a main switch, are presented, where the diameter of a disk target and the target position from the plasma source are varied.
The time evolution of the applied voltage indicates the presence of a single transient.
Figure 4 Time evolution of the applied voltage during a constant current electrochemical Er insertion process.
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