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The low horizontal etch rate contributes to a long etching time to release the surrounding panels.
Etching time was optimized by plotting the etch time until hole formation as a function of initial sample thickness, along with plotting sample thickness versus etching time.
Etching time effect on the rate was examined by measuring the etch depth as a function of etching time in the range of 0 to 360 min.
We found the optimal wet etching time of quartz.
The substrate roughness was increased by longer etching time.
The adsorption behavior was influenced by both the plasma etching time and the initial MB concentration.
This design can reduce the etching time and still provide stiff-enough suspension.
And the wettability of superhydrophobic surfaces can be controlled via varying the etching time.
The depths of silicon microhole arrays can be independently controlled by the etching time.
(A) Etching time, 1 min; (B) etching time, 10 min; and (C) etching time, 60 min.
The etching time is 15 min.
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