Sentence examples for etching stage from inspiring English sources

The number of subsurface cracks decreases after each etching stage, which leads to a decrease in surface roughness.

Wong et al. [50] measured the peak-to-valley (PV) value and root-mean-square deviation R q of the surface profile with a detection probe at each etching stage.

The final etching stage results in the complete dissolution of the barrier layer and the acrylic support leaving an off-white coloured oxide membrane.

In order to clarify whether the DOX was encapsulated within the hollow cavities or retained only in the silica shell and polylectrolyte coating, we fabricated silica-coated iron nanoparticles with a solid core (by omitting the iron oxide etching stage) and applied the same protocols to load DOX/Gd-DTPA into these solid particles (Supporting Information Figure S5).

At the initial etching stages, a crack is exposed, which allows the tip of the probe to reach the inside of the crack, thus resulting in a high measurement value of surface roughness.

Galvanostatic etching to stage III, an activated surface of Mg or Mg alloy, was obtained for electroplating a uniformly covered Cu deposit in the alkaline Cu-sulfate bath.

But equally of interest to Manaus citizens was the theatre itself: its ornate seats and electric lighting; its intricate murals honouring composers from Mozart and Beethoven to the Brazilian Carlos Gomez; and its lavish etching on the stage curtain depicting a local natural landmark, the confluence of the Rio Negro and Solimões to form the mighty Amazon river.

After this stage, etching proceeds by both lateral undercutting of the {100} sides and fast propagation of the planes at the free end.

In the first stage of etching, 2.5% alcoholic nitric acid solution was used to reveal the microstructure of carbon steel side.

Both images in Fig. 4refer to an early stage of etching, for which only some pore bottoms have already been removed, and the exposed surface is still comparatively close to the originally exposed one (depth < 100 nm).

In this paper, we analyzed elementary reaction processes and their activation barriers of dissociative adsorption of water and hydrolysis of Ga-terminated GaN surfaces as the initial stage of etching processes by means of first-principles calculations.