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We reported a metal-assisted chemical etching approach to manufacture well-aligned silicon nanowires (SiNWs).
We developed a near 100% metal-free Si interface by a HF-free etching approach.
In contrast, high uniformity and a greater diversity of shape and design can be produced via a top-down etching approach.
An electrochemical etching approach was developed to fabricate self-similar nano- and microscale pyramid structures on single-crystal gold (1 0 0) surfaces.
Through a typical Ag-assisted chemical etching approach, uniform and porous Si nanowires have been fabricated on heavily doped Si wafer.
The material synthesis concept and scalable simultaneous etching approach presented here represent a means of improving the electrochemical properties of Si-based porous anode materials for use in commercial LIBs.
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Compared to the now relatively mature etching approaches, this direct-synthesis approach may allow production of "less stable" clusters, presently synthetically elusive clusters, and a larger panel of biologically useful water-soluble clusters than is presently available.
Here we report a copper-assisted selective deposition-etching approach to Pt4PdCu0.4 nanoframes that meet all the requirements, offered by structure and electronic structure effects.
Fan et al. [12] have developed a process to transformed silicon nanowire arrays into silica nanotube arrays through a thermal oxidation-etching approach.
Because the self-etch approach does not require moisture control after etching, these systems can potentially simplify the technique.
In this work, the uniform 2D Co3O4-based building blocks have been prepared through a facile chemical etching assistant approach and a following treatment of thermal annealing.
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