A second-order CRPC lattice was defined on the upper InGaAs layer using DEHL technique and subsequently etched to a depth of 150 nm by wet chemical etching.
By etching a bulk Si substrate in HF electrolyte with electric field, Si can be etched to produce long, straight-walled, uniform pores having micrometer-sized dimensions.
The photoresist-defined silicon wafers were then anisotropically etched to a desired depth in a multiplex inductively coupled plasma etching system (Surface Technology Systems, Newport, NJ, USA).
Etch pit density (EPD) experiment shows all dislocations have been etched to form cavities at low pressure, but not all the cavities result from etched dislocations.
All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution.
The squares are etched to varying depths, depending on the degree to which they were hardened.
At each stage the layers are etched to make electrical connections.
Line plates are usually etched to depths of 0.010 to 0.045 inch.
The ibexes' eyes, horns, hooves and tails are all etched to dramatize their terror.
Reproduce the contours with large panels of stainless steel etched to a soft matte finish.
Halftones may be etched to depths of 0.0023 to 0.009 inch, depending on the fineness of the screen.
