Exact(2)
We report an optimized room-temperature etching recipe for Indium Phosphide (InP) based on the inductively coupled plasma (ICP) reactive-ion etch using Cl2/CH4/H2 gasses.
Three silicon parts (mask, reflector, and field stop plates) have been fabricated by through-wafer etch using Bosch process, and have been assembled with a diffuser plate.
Similar(58)
Silicon trench etch uses an inorganic sidewall protective coating called passivation to control the shape of the trench.
After the lithography process, the back of the SiNx was etched using reactive ion etching (RIE), followed by bulk silicon etching using a KOH silicon etchant.
Most of the bulk silicon was carefully etched using KOH wet-etching and the remaining silicon with a thickness of 20 μm was etched using XeF2 etching.
For a detailed study of the microstructures and grain boundaries of the matrix or reinforcement, the polished sample is to be etched using some suitable etching agent.
After developing, wafers were etched using reactive ion etching (ICP etcher, SPTS, San Jose, CA), with SF6 gas and C4F8 gas.
For the cantilever structure, the silicon nitride was etched using standard reactive ion etching (RIE), and the silicon was etched using isotropic wet etching using RSE-200 etchant.
Figure 6 shows the performance of samples etched using wet and electrochemical etching.
Figure 6 Performance of samples etched using wet and electrochemical etching.
After annealing, the samples were exposed to oxygen plasma to remove the polymer matrix from the film, and then, the underneath silicon was etched using a non-switching etching recipe with SF6 and C4F8 gas.
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