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When the programmed device is erased at −15 V, the resulting transfer curve shifts in the direction of negative bias as a function of erasing time.
In addition, it is found that a high work function gate electrode (Pt) contributes to a significant reduction of data erasing time and an improved data retention characteristic of MAHAHOS memory device.
In addition, as the erasing voltage increases from −12 to −15 V, the ΔV th increases from −0.5 to −1.9 V in the case of 200 ms erasing time, as shown in Fig. 8b.
That is, as the erasing time increases from 50 to 300 ms, the ΔV th relative to the programmed device increases from −1.03 to −2.42 V, as shown in Fig. 8a.
Figure 8 shows the typical electrical erasing characteristics of the programmed devices under different erasing time and voltage, respectively.
b Under different gate biases for a constant erasing time of 200 ms.
Similar(54)
And all the time, I'm thinking, my bag has gone, my computer's been erased, time is ticking, nothing's happening.
You have just erased time and distance and you're having this experience right now!
This might be the main reason of the long program and erase time.
Besides, it also shows that the erase time to achieve the memory window of 3 V is around 5 ms at -13 V, which is very desirable as compared with the recently reported data of poly-Si NW based SONOS memory cells [9, 17, 18].
There's a somnambulistic, forgetful quality here that erases time, making it very easy to drift.
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