This might be the main reason of the long program and erase time.
Besides, it also shows that the erase time to achieve the memory window of 3 V is around 5 ms at -13 V, which is very desirable as compared with the recently reported data of poly-Si NW based SONOS memory cells [9, 17, 18].
Larry Gorski, Rentway's vice president for human resources, said his company strictly prohibited erasing time.
And all the time, I'm thinking, my bag has gone, my computer's been erased, time is ticking, nothing's happening.
Like Mr. Pooters, these women have joined a lawsuit that accuses Family Dollar of erasing time and requiring off-the-clock work.
In addition, it is found that a high work function gate electrode (Pt) contributes to a significant reduction of data erasing time and an improved data retention characteristic of MAHAHOS memory device.
Figure 8 shows the typical electrical erasing characteristics of the programmed devices under different erasing time and voltage, respectively.
When the programmed device is erased at −15 V, the resulting transfer curve shifts in the direction of negative bias as a function of erasing time.
In addition, as the erasing voltage increases from −12 to −15 V, the ΔV th increases from −0.5 to −1.9 V in the case of 200 ms erasing time, as shown in Fig. 8b.
That is, as the erasing time increases from 50 to 300 ms, the ΔV th relative to the programmed device increases from −1.03 to −2.42 V, as shown in Fig. 8a.
